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BUK9Y40-55B Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET | |||
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BUK9Y40-55B
N-channel TrenchMOS logic level FET
Rev. 03 â 22 February 2008
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features
 175 °C rated
 Q101 compliant
 Logic level compatible
 Very low on-state resistance
1.3 Applications
 12 V and 24 V loads
 General purpose power switching
 Automotive systems
 Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
ID
drain current
VGS = 5 V; Tmb = 25 °C;
see Figure 1 and 4
Ptot
total power dissipation Tmb = 25 °C; see Figure 2
Static characteristics
RDSon
drain-source on-state
resistance
VGS = 5 V; ID = 15 A;
Tj = 25 °C; see Figure 12 and
13
Avalanche ruggedness
EDS(AL)S non-repetitive
ID = 26 A; Vsup ⤠55 V;
drain-source avalanche RGS = 50 Ω; VGS = 5 V;
energy
Tj(init) = 25 °C; unclamped
Min Typ Max Unit
-
-
26 A
-
-
59 W
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34 40 mΩ
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-
36 mJ
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