BUK9Y19-55B Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS™ logic level FET

BUK9Y19-55B
N-channel TrenchMOS logic level FET
Rev. 03 — 29 February 2008
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features
„ 175 °C rated
„ Q101 compliant
„ Logic level compatible
„ Very low on-state resistance
1.3 Applications
„ 12 V and 24 V loads
„ General purpose power switching
„ Automotive systems
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
I_D
drain current
P_tot
total power dissipation
Static characteristics
R_DSon
drain-source on-state
resistance
Avalanche ruggedness
E_DS(AL)S non-repetitive
drain-source
avalanche energy
Conditions
V_GS = 5 V; T_mb = 25 °C;
see Figure 1 and 4
T_mb = 25 °C; see Figure 2
V_GS = 5 V; I_D = 20 A;
T_j = 25 °C; see Figure 12 and
13
I_D = 46 A; V_sup ≤ 55 V;
R_GS = 50 Ω; V_GS = 5 V;
T_j(init) = 25 °C; unclamped
Min Typ Max Unit
-
-
46 A
-
-
85 W
-
16.3 19 mΩ
-
-
80 mJ