BUK9Y14-40B Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

BUK9Y14-40B
N-channel TrenchMOS logic level FET
Rev. 03 — 2 June 2008
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Suitable for logic level gate drive
sources
„ Q101 compliant
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ Air bag
„ Automotive transmission control
„ Fuel pump and injection
„ Automotive ABS systems
„ Diesel injection systems
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
V_DS
drain-source voltage
I_D
drain current
P_tot
total power dissipation
Dynamic characteristics
Q_GD
gate-drain charge
Static characteristics
R_DSon
drain-source on-state
resistance
Avalanche ruggedness
E_DS(AL)S non-repetitive
drain-source
avalanche energy
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
V_GS = 5 V; T_mb = 25 °C;
see Figure 4 and 1
T_mb = 25 °C; see Figure 2
V_GS = 5 V; I_D = 10 A;
V_DS = 32 V; see Figure 14
V_GS = 5 V; I_D = 20 A;
T_j = 25 °C; see Figure 12 and
13
I_D = 56 A; V_sup ≤ 40 V;
R_GS = 50 Ω; V_GS = 5 V;
T_j(init) = 25 °C; unclamped
Min Typ Max Unit
-
-
40 V
-
-
56 A
-
-
85 W
-
9-
nC
-
12 14 mΩ
-
-
89 mJ