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BUK9MJJ-55PTT Datasheet, PDF (1/15 Pages) NXP Semiconductors – Dual TrenchPLUS logic level FET | |||
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BUK9MJJ-55PTT
Dual TrenchPLUS logic level FET
Rev. 01 â 14 May 2009
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode field-effect power transistor in SO20. Device is
manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring
very low on-state resistance, integrated current sensing transistors and over temperature
protection diodes.
1.2 Features and benefits
 Integrated current sensors
 Integrated temperature sensors
1.3 Applications
 Lamp switching
 Motor drive systems
 Power distribution
 Solenoid drivers
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Static characteristics, FET1 and FET2
RDSon
drain-source
on-state resistance
VGS = 5 V; ID = 10 A;
Tj = 25 °C; see Figure 16;
see Figure 17
ID/Isense ratio of drain current Tj = 25 °C; VGS = 5 V; see
to sense current
Figure 18
V(BR)DSS drain-source
Tj = 25 °C; VGS = 0 V;
breakdown voltage ID = 250 µA
Min Typ Max Unit
-
13 15 mâ¦
5850 6500 7150 A/A
55 -
-
V
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