|
BUK9E06-55B Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS FET | |||
|
BUK9E06-55B
N-channel TrenchMOS FET
Rev. 04 â 22 July 2009
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology. This product has been designed and qualified to the appropriate
AEC standard for use in automotive critical applications.
1.2 Features and benefits
 Low conduction losses due to low
on-state resistance
 Q101 compliant
 Suitable for logic level gate drive
sources
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V and 24 V loads
 Automotive systems
 General purpose power switching
 Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS
drain-source voltage Tj ⥠25 °C; Tj ⤠175 °C
-
-
55 V
ID
drain current
VGS = 5 V; Tmb = 25 °C;
[1] -
-
75 A
see Figure 1; see Figure 3
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
-
-
258 W
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
ID = 75 A; Vsup ⤠55 V;
RGS = 50 â¦; VGS = 5 V;
Tj(init) = 25 °C; unclamped
-
-
679 mJ
QGD
gate-drain charge VGS = 5 V; ID = 25 A;
VDS = 44 V; Tj = 25 °C;
see Figure 14; see Figure 15
-
22 -
nC
|
▷ |