BUK9907-55ATE Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel TrenchPLUS logic level FET

BUK9907-55ATE
N-channel TrenchPLUS logic level FET
Rev. 02 — 16 February 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been
designed and qualified to the appropriate AEC standard for use in automotive critical
applications.
1.2 Features and benefits
„ Allows responsive temperature
monitoring due to integrated
temperature sensor
„ Q101 compliant
„ Electrostatically robust due to
integrated protection diodes
„ Low conduction losses due to low
on-state resistance
1.3 Applications
„ 12 V and 24 V high power motor
drives
„ Automotive and general purpose
power switching
„ Electrical Power Assisted Steering
(EPAS)
„ Protected drive for lamps
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
V_DS
drain-source voltage
I_D
drain current
P_tot
total power dissipation
T_j
junction temperature
Static characteristics
T_j ≥ 25 °C; T_j ≤ 175 °C
V_GS = 5 V; T_mb = 25 °C; see Figure 2 and 3
T_mb = 25 °C; see Figure 1
R_DSon
S_F(TSD)
drain-source on-state
resistance
V_GS = 4.5 V; I_D = 50 A; T_j = 25 °C
V_GS = 10 V; I_D = 50 A; T_j = 25 °C
V_GS = 5 V; I_D = 50 A; T_j = 25 °C; see Figure 7 and 8
temperature sense diode I_F = 250 µA; T_j > -55 °C; T_j < 175 °C
temperature coefficient
V_F(TSD) temperature sense diode I_F = 250 µA; T_j = 25 °C
forward voltage
Min
-
[1] -
-
-55
-
-
-
-1.4
648
Typ Max Unit
-
55 V
-
140 A
-
272 W
-
175 °C
6
7.7 mΩ
5.2 6.2 mΩ
5.8 7
mΩ
-1.54 -1.68 mV/K
658 668 mV
[1] Current is limited by power dissipation chip rating.