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BUK98150-55A Datasheet, PDF (1/13 Pages) NXP Semiconductors – TrenchMOS logic level FET
BUK98150-55A
N-channel TrenchMOS logic level FET
Rev. 04 — 11 June 2007
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package
using NXP General Purpose Automotive (GPA) TrenchMOS technology.
1.2 Features
I Very low on-state resistance
I 150 °C rated
I Q101 compliant
I Logic level compatible
1.3 Applications
I Automotive systems
I Motors, lamps and solenoids
I General purpose power switching
I 12 V and 24 V loads
1.4 Quick reference data
I EDS(AL)S ≤ 22 mJ
I ID ≤ 5.5 A
I RDSon = 128 mΩ (typ)
I Ptot ≤ 8 W
2. Pinning information
Table 1. Pinning
Pin Description
1
gate (G)
2
drain (D)
3
source (S)
4
soldering point; connected to drain (D)
Simplified outline
4
1
2
3
sot223_so
SOT223 (SC-73)
Symbol
D
G
mbb076 S