BUK962R2-40C Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

BUK962R2-40C
N-channel TrenchMOS logic level FET
Rev. 02 — 17 April 2008
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Suitable for logic level gate drive
sources
„ Q101 compliant
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V loads
„ General purpose power switching
„ Automotive systems
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
V_GS = 5 V; T_j = 25 °C;
see Figure 1 and 4
-
-
40 V
[1][2] _-
-
100 A
P_tot
total power dissipation T_mb = 25 °C; see Figure 2
Avalanche ruggedness
-
-
333 W
E_DS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
I_D = 100 A; V_sup ≤ 40 V;
R_GS = 50 Ω; V_GS = 5 V;
T_j(init) = 25 °C; unclamped
-
-
1.2 J
Q_GD
gate-drain charge
Static characteristics
V_GS = 5 V; I_D = 25 A;
V_DS = 32 V; see Figure 14
-
73 -
nC
R_DSon
drain-source on-state
resistance
V_GS = 5 V; I_D = 25 A;
T_j = 25 °C; see Figure 12, 11
and 13
-
2 2.2 mΩ
[1] Continuous current is limited by package.
[2] Refer to document 9397 750 12572 for further information.