BUK9609-75A Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

BUK9609-75A
N-channel TrenchMOS logic level FET
Rev. 03 — 22 September 2008
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Q101 compliant
„ Suitable for logic level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V, 24 V and 42 V loads
„ Automotive and general purpose
power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
V_GS = 5 V; T_j = 25 °C; see
Figure 3; see Figure 1
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
Avalanche ruggedness
E_DS(AL)S non-repetitive
drain-source
avalanche energy
Static characteristics
I_D = 75 A; V_sup ≤ 75 V;
R_GS = 50 Ω; V_GS = 5 V;
T_j(init) = 25 °C; unclamped
R_DSon
drain-source
on-state resistance
V_GS = 4.5 V; I_D = 25 A;
T_j = 25 °C
V_GS = 5 V; I_D = 25 A;
T_j = 25 °C; see Figure 12;
see Figure 15
Min Typ Max Unit
-
-
75 V
-
-
75 A
-
-
230 W
-
-
562 mJ
-
-
9.95 mΩ
-
7.6 9
mΩ