BUK9606-55B Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS FET

BUK9606-55B
N-channel TrenchMOS FET
Rev. 04 — 23 July 2009
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology. This product has been designed and qualified to the appropriate
AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Q101 compliant
„ Suitable for logic level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V and 24 V loads
„ Automotive systems
„ General purpose power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
-
-
55 V
I_D
drain current
V_GS = 5 V; T_mb = 25 °C;
[1] _-
-
75 A
see Figure 1 and 3
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
-
-
258 W
Avalanche ruggedness
E_DS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
I_D = 75 A; V_sup ≤ 55 V;
R_GS = 50 Ω; V_GS = 5 V;
T_j(init) = 25 °C; unclamped
-
-
679 mJ
Q_GD
gate-drain charge V_GS = 5 V; I_D = 25 A;
V_DS = 44 V; T_j = 25 °C;
see Figure 14 and 15
-
22 -
nC