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BUK952R4-40C Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET | |||
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BUK952R4-40C
N-channel TrenchMOS logic level FET
Rev. 02 â 11 April 2008
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
 Low conduction losses due to low
on-state resistance
 Suitable for logic level gate drive
sources
 Q101 compliant
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V loads
 General purpose power switching
 Automotive systems
 Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS
drain-source voltage Tj ⥠25 °C; Tj ⤠175 °C
ID
drain current
VGS = 5 V; Tj = 25 °C;
see Figure 1 and 4
-
-
40 V
[1][2] -
-
100 A
Ptot
total power dissipation Tmb = 25 °C; see Figure 2
Avalanche ruggedness
-
-
333 W
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
ID = 100 A; Vsup ⤠40 V;
RGS = 50 Ω; VGS = 5 V;
Tj(init) = 25 °C; unclamped
-
-
1.2 J
QGD
gate-drain charge
Static characteristics
VGS = 5 V; ID = 25 A;
VDS = 32 V; see Figure 14
-
73 -
nC
RDSon
drain-source on-state
resistance
VGS = 5 V; ID = 25 A;
Tj = 25 °C; see Figure 12, 11
and 13
-
2.1 2.4 mΩ
[1] Continuous current is limited by package.
[2] Refer to document 9397 750 12572 for further information.
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