BUK9107-40ATC Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel TrenchPLUS logic level FET

BUK9107-40ATC
N-channel TrenchPLUS logic level FET
Rev. 04 — 16 February 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
„ Allows responsive temperature
monitoring due to integrated
temperature sensor
„ Low conduction losses due to low
on-state resistance
„ Q101 compliant
1.3 Applications
„ 12 V and 24 V high power motor
drives
„ Automotive and general purpose
power switching
„ Electrical Power Assisted Steering
(EPAS)
„ Protected drive for lamps
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
I_D
drain current
P_tot
T_j
R_DSon
total power dissipation
junction temperature
drain-source on-state
resistance
S_F(TSD)
V_F(TSD)
temperature sense diode
temperature coefficient
temperature sense diode
forward voltage
Conditions
V_GS = 5 V; T_mb = 25 °C; see Figure 2;
see Figure 3
T_mb = 25 °C; see Figure 1
V_GS = 10 V; I_D = 50 A; T_j = 25 °C
V_GS = 4.5 V; I_D = 50 A; T_j = 25 °C
V_GS = 5 V; I_D = 50 A; T_j = 25 °C;
see Figure 7; see Figure 8
I_F = 250 µA; T_j > -55 °C; T_j < 175 °C
I_F = 250 µA; T_j = 25 °C
[1] Current is limited by power dissipation chip rating.
Min Typ Max Unit
[1] -
-
140 A
-
-
272 W
-55 -
175 °C
-
5.2 6.2 mΩ
-
6
7.7 mΩ
-
5.8 7
mΩ
-1.4 -1.54 -1.68 mV/K
648 658 668 mV