BUK7Y98-80E Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel 80 V, 98 mΩ standard level MOSFET in LFPAK56

BUK7Y98-80E
N-channel 80 V, 98 mΩ standard level MOSFET in LFPAK56
20 February 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC Q101
standard for use in high performance automotive applications.
2. Features and benefits
• Q101 compliant
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175 °C rating
• True standard level gate with V_GS(th) rating of greater than 1 V at 175 °C
3. Applications
• 12 V, 24 V and 48 V Automotive systems
• Motors, lamps and solenoid control
• Transmission control
• Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
V_GS = 10 V; T_mb = 25 °C; Fig. 1
P_tot
total power dissipation T_mb = 25 °C; Fig. 2
Static characteristics
R_DSon
drain-source on-state V_GS = 10 V; I_D = 5 A; T_j = 25 °C; Fig. 11
resistance
Dynamic characteristics
Q_GD
gate-drain charge
V_GS = 10 V; I_D = 5 A; V_DS = 64 V;
T_j = 25 °C; Fig. 13; Fig. 14
Min Typ Max Unit
-
-
80
V
-
-
12.3 A
-
-
37
W
-
70
98
mΩ
-
3
-
nC
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