|
BUK7Y6R0-60E Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel 60 V, 6.0 mΩ standard level MOSFET in LFPAK56 | |||
|
BUK7Y6R0-60E
N-channel 60 V, 6.0 mΩ standard level MOSFET in LFPAK56
20 February 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC Q101
standard for use in high performance automotive applications.
2. Features and benefits
⢠Q101 compliant
⢠Repetitive avalanche rated
⢠Suitable for thermally demanding environments due to 175 °C rating
⢠True standard level gate with VGS(th) rating of greater than 1 V at 175 °C
3. Applications
⢠12 V Automotive systems
⢠Motors, lamps and solenoid control
⢠Transmission control
⢠Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS
drain-source voltage Tj ⥠25 °C; Tj ⤠175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Ptot
total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 11
Dynamic characteristics
QGD
gate-drain charge
ID = 25 A; VDS = 48 V; VGS = 10 V;
Fig. 13; Fig. 14
[1] Continuous current is limited by package.
Min Typ Max Unit
-
-
60
V
[1]
-
-
100 A
-
-
195 W
-
4
6
mΩ
-
12.1 -
nC
Scan or click this QR code to view the latest information for this product
|
▷ |