BUK7Y28-75B Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK7Y28-75B
N-channel TrenchMOS standard level FET
Rev. 03 — 18 February 2010
Objective data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
„ Q101 compliant
„ Suitable for standard level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V, 24 V and 42 V loads
„ Automotive systems
„ DC-to-DC converters
„ Engine management
„ General purpose power switching
„ Solenoid drivers
„ Transmission control
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
V_GS = 10 V; T_mb = 25 °C;
see Figure 1 and 3
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
Dynamic characteristics
Q_GD
gate-drain charge
Static characteristics
I_D = 15 A; V_DS = 60 V;
V_GS = 10 V; see Figure 15
R_DSon
drain-source
on-state resistance
V_GS = 10 V; I_D = 15 A;
T_j = 25 °C; see Figure 12
and 13
Avalanche ruggedness
E_DS(AL)S non-repetitive
drain-source
avalanche energy
I_D = 35.5 A; V_sup ≤ 75 V;
R_GS = 50 Ω; V_GS = 10 V;
T_j(init) = 25 °C; unclamped
Min Typ Max Unit
-
-
75 V
-
-
35.5 A
-
-
85 W
-
7.4 -
nC
-
23 28 mΩ
-
-
75 mJ