BUK7Y18-75B Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK7Y18-75B
N-channel TrenchMOS standard level FET
Rev. 03 — 7 April 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
 Q101 compliant
 Suitable for standard level gate drive
sources
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V, 24 V and 42 V loads
 Automotive systems
 DC-to-DC converters
 Engine management
 General purpose power switching
 Motors, lamps and solenoids
 Transmission control
1.4 Quick reference data
Table 1. Quick reference data
Symbol
V_DS
Parameter
drain-source
voltage
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
V_GS = 10 V; T_mb = 25 °C;
see Figure 1; see Figure 4
P_tot
total power
T_mb = 25 °C; see Figure 2
dissipation
Static characteristics
R_DSon
drain-source
on-state
resistance
V_GS = 10 V; I_D = 20 A;
T_j = 25 °C; see Figure 12;
see Figure 13
Min Typ Max Unit
-
-
75 V
-
-
49 A
-
-
105 W
-
13.8 18 mΩ