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| BUK7L3R3-34BRC Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET | |||
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BUK7L3R3-34BRC
N-channel TrenchPLUS standard level FET
Rev. 02 â 26 September 2007
Product data sheet
1. Product proï¬le
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package
using NXP High-Performance Automotive (HPA) TrenchMOS technology, featuring very
low on-state resistance, internal gate resistor, ElectroStatic Discharge (ESD) protection
diodes and clamping diodes that are guaranteed to prevent MOSFET avalanching.
1.2 Features
I Internal gate resistor
I 175 °C rated
I Q101 compliant
I ESD and overvoltage protection
1.3 Applications
I Automotive systems
I Motors, lamps and solenoids
I General purpose power switching
I 12 V loads
1.4 Quick reference data
I EDS(AL)S ⤠1.9 J
I ID ⤠75 A
I RDSon = 2.9 m⦠(typ)
I Ptot ⤠298 W
2. Pinning information
Table 1. Pinning
Pin Description
1
gate (G)
2
drain (D)
3
source (S)
mb mounting base; connected to drain (D)
Simpliï¬ed outline
mb
Symbol
D
G
123
SOT78C (TO-220)
S
sym094
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