BUK7L11-34ARC Datasheet, PDF (1/15 Pages) NXP Semiconductors – TrenchPLUS standard level FET

BUK7L11-34ARC
N-channel TrenchPLUS standard level FET
Rev. 05 — 17 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include internal gate resistors and
TrenchPLUS diodes for clamping and ElectroStatic Discharge (ESD) protection. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Q101 compliant
„ Reduced component count due to
integrated gate resistor
1.3 Applications
„ 12 V loads
„ Automotive systems
„ General purpose power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
I_D
drain current
V_GS = 10 V; T_mb = 25 °C; [1] -
-
89 A
see Figure 1; see Figure 3 [2]
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
-
-
172 W
Static characteristics
R_DSon
drain-source
on-state resistance
V_GS = 10 V; I_D = 30 A;
T_j = 25 °C; see Figure 14;
see Figure 6
-
8
11 mΩ
[1] Current is limited by power dissipation chip rating.
[2] Refer to document 9397 750 12572 for further information.