BUK7E2R3-40C Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK7E2R3-40C
N-channel TrenchMOS standard level FET
Rev. 03 — 26 January 2009
Product data sheet
1. Product profile
1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using advanced TrenchMOS technology. This product has been designed
and qualified to the appropriate AEC standard for use in high performance automotive
applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Avalanche robust
„ Suitable for standard level gate drive
„ Suitable for thermally demanding
environment up to 175°C rating
1.3 Applications
„ 12V Motor, lamp and solenoid loads
„ High performance automotive power
systems
„ High performance Pulse Width
Modulation (PWM) applications
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
-
-
40 V
I_D
drain current
V_GS = 10 V; T_mb = 25 °C; [1] -
-
100 A
see Figure 1; see Figure 3; [2]
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
-
-
333 W
Static characteristics
R_DSon
drain-source
on-state resistance
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C; see Figure 12;
see Figure 13
-
1.96 2.3 mΩ
Avalanche ruggedness
E_DS(AL)S non-repetitive
drain-source
avalanche energy
I_D = 100 A; V_sup ≤ 40 V;
R_GS = 50 Ω; V_GS = 10 V;
T_j(init) = 25 °C; unclamped
-
-
1.2 J
[1] Refer to document 9397 750 12572 for further information.
[2] Continuous current is limited by package.