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BUK725R0-40C Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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BUK725R0-40C
N-channel TrenchMOS standard level FET
Rev. 01 â 23 March 2009
Product data sheet
1. Product profile
1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using advanced TrenchMOS technology. This product has been designed
and qualified to the appropriate AEC standard for use in high performance automotive
applications.
1.2 Features and benefits
 AEC Q101 compliant
 Avalanche robust
 Suitable for standard level gate drive
 Suitable for thermally demanding
environment up to 175°C rating
1.3 Applications
 12V Motor, lamp and solenoid loads
 High performance automotive power
systems
 High performance Pulse Width
Modulation (PWM) applications
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS
drain-source voltage
ID
drain current
Tj ⥠25 °C; Tj ⤠175 °C
VGS = 10 V; Tmb = 25 °C; see Figure 1;
see Figure 3;
-
-
40 V
[1] -
-
75 A
Ptot
total power dissipation
Avalanche ruggedness
Tmb = 25 °C; see Figure 2
-
-
157 W
EDS(AL)S non-repetitive drain-source ID = 75 A; Vsup ⤠40 V; RGS = 50 â¦; VGS = 10 V;
avalanche energy
Tj(init) = 25 °C; unclamped
Dynamic characteristics
-
-
240 mJ
QGD
gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 32 V; Tj = 25 °C;
see Figure 15
-
27 -
nC
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 12; see Figure 13
-
4.1 5
mâ¦
[1] Current is limited by package.
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