BUK7210-55B Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK7210-55B
N-channel TrenchMOS standard level FET
Rev. 01 — 11 December 2008
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
„ 185 °C rated
„ Q101 compliant
„ Standard level compatible
„ Very low on-state resistance
1.3 Applications
„ 12 V and 24 V loads
„ Automotive systems
„ General purpose power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 185 °C
-
-
55 V
I_D
drain current
V_GS = 10 V; T_mb = 25 °C; [1] -
-
75 A
see Figure 1; see Figure 3;
Static characteristics
R_DSon
drain-source
on-state resistance
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C; see Figure 10;
see Figure 9
-
8.5 10 mΩ
Avalanche ruggedness
E_DS(AL)S non-repetitive
drain-source
avalanche energy
I_D = 75 A; V_sup ≤ 55 V;
R_GS = 50 Ω; V_GS = 10 V;
T_j(init) = 25 °C; unclamped
inductive load
-
-
173 mJ
[1] Continuous current is limited by package.