BT152X-800R.127 Datasheet, PDF (1/11 Pages) NXP Semiconductors – SCR

BT152X-800R
SCR
26 July 2012
Product data sheet
1. Product profile
1.1 General description
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full
pack" plastic package intended for use in applications requiring very high inrush current
capability and high thermal cycling performance.
1.2 Features and benefits
• High blocking voltage capability
• High thermal cycling performance
• Isolated mounting base package
• Planar passivated for voltage ruggedness and reliability
• Very high current surge capability
1.3 Applications
• Capacitive Discharge Ignition (CDI)
• Crowbar protection
• Inrush protection
• Motor control
• Voltage regulation
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DRM
repetitive peak off-
state voltage
V_RRM
repetitive peak reverse
voltage
I_TSM
non-repetitive peak on- half sine wave; T_j(init) = 25 °C;
state current
t_p = 10 ms; Fig. 4; Fig. 5
I_T(RMS)
RMS on-state current half sine wave; T_h ≤ 43 °C; Fig. 1;
Fig. 2; Fig. 3
Static characteristics
I_GT
gate trigger current
V_D = 12 V; I_T = 0.1 A; T_j = 25 °C; Fig. 7
Min Typ Max Unit
-
-
800 V
-
-
800 V
-
-
200 A
-
-
20
A
-
3
32
mA
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