BT152-800R_11 Datasheet, PDF (1/12 Pages) NXP Semiconductors – High thermal cycling performance Very high current surge capability

BT152-800R
SCR
Rev. 2 — 9 June 2011
Product data sheet
1. Product profile
1.1 General description
Planar passivated Silicon Controlled Rectifier in a SOT78 (TO-220AB) plastic package
intended for use in applications requiring very high inrush current capability and high
thermal cycling performance.
1.2 Features and benefits
 High thermal cycling performance
 High voltage capability
 Planar passivated for voltage
ruggedness and reliability
 Very high current surge capability
1.3 Applications
 Ignition circuits
 Motor control
 Protection circuits e.g. SMPS inrush
current
 Voltage regulation
1.4 Quick reference data
Table 1.
Symbol
V_DRM
V_RRM
I_TSM
Quick reference data
Parameter
repetitive peak off-state
voltage
repetitive peak reverse
voltage
non-repetitive peak
on-state current
I_T(AV)
average on-state current
I_T(RMS)
RMS on-state current
Static characteristics
I_GT
gate trigger current
Conditions
half sine wave; T_j(init) = 25 °C;
t_p = 10 ms; see Figure 4;
see Figure 5
half sine wave; T_j(init) = 25 °C;
t_p = 8.3 ms
half sine wave; T_mb ≤ 103 °C;
see Figure 3
half sine wave; see Figure 1;
see Figure 2
V_D = 12 V; I_T = 0.1 A;
T_j = 25 °C; see Figure 7
Min Typ Max Unit
-
-
800 V
-
-
800 V
-
-
200 A
-
-
220 A
-
-
13 A
-
-
20 A
-
3 32 mA