 English |
|
|
|
|
|
|
|
| BT152-500RT_11 Datasheet, PDF (1/12 Pages) NXP Semiconductors – High junction temperature capability Very high current surge capability | |||
| |||
|
BT152-500RT
SCR
Rev. 2 â 9 June 2011
Product data sheet
1. Product profile
1.1 General description
Planar passivated Silicon Controlled Rectifier in a SOT78 (TO-220AB) plastic package
intended for use in applications requiring very high inrush current capability, high junction
temperature capability and high thermal cycling performance.
1.2 Features and benefits
ï® High junction temperature capability
ï® High thermal cycling performance
ï® Planar passivated for voltage
ruggedness and reliability
ï® Very high current surge capability
1.3 Applications
ï® Ignition circuits
ï® Motor control
ï® Protection circuits e.g. SMPS inrush
current
ï® Voltage regulation
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDRM
repetitive peak off-state
voltage
VRRM
repetitive peak reverse
voltage
ITSM
non-repetitive peak
half sine wave; Tj(init) = 25 °C;
on-state current
tp = 8.3 ms
half sine wave; Tj(init) = 25 °C;
tp = 10 ms; see Figure 4;
see Figure 5
IT(AV)
average on-state
current
half sine wave; Tmb ⤠122 °C;
see Figure 3
IT(RMS)
RMS on-state current half sine wave; see Figure 1;
see Figure 2
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 100 mA;
Tj = 25 °C; see Figure 7
Min Typ Max Unit
-
-
500 V
-
-
500 V
-
-
220 A
-
-
200 A
-
-
13 A
-
-
20 A
-
3 32 mA
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese