BT151S Datasheet, PDF (1/13 Pages) NXP Semiconductors – Thyristors

BT151S series L and R
Thyristors
Rev. 05 — 9 October 2006
Product data sheet
1. Product profile
1.1 General description
Passivated thyristors in a SOT428 plastic package.
1.2 Features
I High thermal cycling performance
I High bidirectional blocking voltage
capability
I Surface-mounted package
1.3 Applications
I Motor control
I Ignition circuits
I Static switching
I Protection circuits
1.4 Quick reference data
I V_DRM ≤ 500 V (BT151S-500L/R)
I V_RRM ≤ 500 V (BT151S-500L/R)
I V_DRM ≤ 650 V (BT151S-650L/R)
I V_RRM ≤ 650 V (BT151S-650L/R)
I V_DRM ≤ 800 V (BT151S-800R)
I V_RRM ≤ 800 V (BT151S-800R)
I I_TSM ≤ 120 A (t = 10 ms)
I I_T(RMS) ≤ 12 A
I I_T(AV) ≤ 7.5 A
I I_GT ≤ 5 mA (BT151S series L)
I I_GT ≤ 15 mA (BT151S series R)
2. Pinning information
Table 1.
Pin
1
2
3
mb
Pinning
Description
cathode (K)
anode (A)
gate (G)
mounting base; connected to anode
Simplified outline
mb
2
1
3
SOT428 (DPAK)
Symbol
A
K
G
sym037