BT139-800G Datasheet, PDF (1/14 Pages) NXP Semiconductors – High blocking voltage capability

BT139-800G
4Q Triac
Rev. 5 — 23 March 2011
Product data sheet
1. Product profile
1.1 General description
Planar passivated four quadrant triac in a SOT78 plastic package intended for use in
applications requiring high bidirectional transient and blocking voltage capability and high
thermal cycling performance. Typical applications include motor control, industrial and
domestic lighting, heating and static switching.
1.2 Features and benefits
„ High blocking voltage capability
„ Least sensitive gate for highest noise
immunity
„ Planar passivated for voltage
ruggedness and reliability
„ Triggering in all four quadrants
1.3 Applications
„ General purpose motor control
„ General purpose switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_DRM
repetitive peak
off-state voltage
I_TSM
non-repetitive
full sine wave; T_j(init) = 25 °C;
peak on-state
t_p = 20 ms; see Figure 4;
current
see Figure 5
I_T(RMS)
RMS on-state
current
full sine wave; T_mb ≤ 99 °C;
see Figure 1; see Figure 2;
see Figure 3
Static characteristics
I_GT
gate trigger
V_D = 12 V; I_T = 0.1 A; T2+ G+;
current
T_j = 25 °C; see Figure 7
V_D = 12 V; I_T = 0.1 A; T2+ G-;
T_j = 25 °C; see Figure 7
V_D = 12 V; I_T = 0.1 A; T2- G-;
T_j = 25 °C; see Figure 7
V_D = 12 V; I_T = 0.1 A; T2- G+;
T_j = 25 °C; see Figure 7
Min Typ Max Unit
-
-
800 V
-
-
155 A
-
-
16 A
-
5 50 mA
-
8 50 mA
-
10 50 mA
-
22 100 mA