BT137600 Datasheet, PDF (1/6 Pages) NXP Semiconductors – Triacs

Philips Semiconductors
Triacs
Product specification
BT137 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated triacs in a plastic envelope,
intended for use in applications requiring
high bidirectional transient and blocking
voltage capability and high thermal
cycling
performance.
Typical
applications include motor control,
industrial and domestic lighting, heating
and static switching.
SYMBOL
V_DRM
I_T(RMS)
I_TSM
PARAMETER
BT137-
BT137-
BT137-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX. MAX. UNIT
600 800
600F
600G
600 800 V
8
8
A
65 65 A
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
tab
1 main terminal 1
2 main terminal 2
T2
T1
3 gate
tab main terminal 2
1 23
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_DRM
I_T(RMS)
I_TSM
I²t
dI_T/dt
I_GM
V_GM
P_GM
P_G(AV)
T_stg
T_j
Repetitive peak off-state
-
voltages
RMS on-state current
Non-repetitive peak
on-state current
full sine wave; T_mb ≤ 102 ˚C
-
full sine wave; T_j = 25 ˚C prior to
surge
t = 20 ms
-
t = 16.7 ms
-
I²t for fusing
t = 10 ms
-
Repetitive rate of rise of I_TM = 12 A; I_G = 0.2 A;
on-state current after
dI_G/dt = 0.2 A/µs
triggering
T2+ G+
-
T2+ G-
-
T2- G-
-
T2- G+
-
Peak gate current
-
Peak gate voltage
-
Peak gate power
-
Average gate power
over any 20 ms period
-
Storage temperature
-40
Operating junction
-
temperature
MAX.
-600
600¹
-800
800
8
65
71
21
50
50
50
10
2
5
5
0.5
150
125
UNIT
V
A
A
A
A²s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
June 2001
1
Rev 1.400