BSS138BK Datasheet, PDF (1/16 Pages) NXP Semiconductors – 60 V, 360 mA N-channel Trench MOSFET

BSS138BK
60 V, 360 mA N-channel Trench MOSFET
Rev. 1 — 4 August 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
 Logic-level compatible
 Very fast switching
 Trench MOSFET technology
 ESD protection up to 1.5 kV
 AEC-Q101 qualified
1.3 Applications
 Relay driver
 High-speed line driver
 Low-side loadswitch
 Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
V_DS
drain-source voltage
V_GS
gate-source voltage
I_D
drain current
Static characteristics
R_DSon
drain-source on-state
resistance
Conditions
T_j = 25 °C
V_GS = 10 V; T_amb = 25 °C
V_GS = 10 V; I_D = 350 mA;
T_j = 25 °C
Min Typ Max Unit
-
-
60 V
-20 -
20 V
[1] _-
-
360 mA
-
1 1.6 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm².