BSN20.215 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

BSN20
N-channel enhancement mode field-effect transistor
Rev. 03 — 26 June 2000
Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™¹ technology.
Product availability:
BSN20 in SOT23.
2. Features
s TrenchMOS™ technology
s Very fast switching
s Logic level compatible
s Subminiature surface mount package.
3. Applications
s Relay driver
s High speed line driver
c
c
s Logic level translator.
4. Pinning information
Table 1: Pinning - SOT23, simplified outline and symbol
Pin
Description
Simplified outline
1
gate (g)
3
2
source (s)
3
drain (d)
03ab44
1
2
SOT23
Symbol
d
g
03ab30
s
N-channel MOSFET
1. TrenchMOS is a trademark of Royal Philips Electronics.