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| BSH114-215 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel enhancement mode field effect transistor | |||
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BSH114
N-channel enhancement mode ï¬eld effect transistor
Rev. 01 â 09 November 2000
M3D088
Product speciï¬cation
1. Description
N-channel enhancement mode ï¬eld-effect transistor in a plastic package using
TrenchMOSâ¢1 technology.
Product availability:
BSH114 in SOT23.
2. Features
s TrenchMOS⢠technology
s Low on-state resistance
s Very fast switching
s Surface mount package.
3. Applications
s Relay driver
s DC to DC converter
c
c
s General purpose switch.
4. Pinning information
Table 1: Pinning - SOT23, simpliï¬ed outline and symbol
Pin
Description
Simpliï¬ed outline
1
gate (g)
3
2
source (s)
3
drain (d)
Symbol
1
2
Top view
MSB003
SOT23
d
g
MBB076
s
1. TrenchMOS is a trademark of Royal Philips Electronics.
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