BLS7G2729L-350P Datasheet, PDF (1/10 Pages) NXP Semiconductors – LDMOS S-band radar power transistor

BLS7G2729L-350P;
BLS7G2729LS-350P
LDMOS S-band radar power transistor
Rev. 1 — 24 May 2011
Objective data sheet
1. Product profile
1.1 General description
350 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 2.9 GHz
range.
Table 1. Typical performance
Typical RF performance at T_case = 25 °C; t_p = 300 μs; δ = 10 %; I_Dq = 200 mA; in a class-AB
production test circuit.
Mode of operation
f
V_DS P_L
G_p η_D
t_r
t_f
(GHz)
(V) (W)
(dB) (%) (ns)
(ns)
pulsed RF
2.7 to 2.9 32 350
13.5 50
20
6
1.2 Features and benefits
„ Typical pulsed RF performance at a frequency of 2.7 GHz to 2.9 GHz, a supply voltage
of 32 V, an I_Dq of 200 mA, a t_p of 300 μs with δ of 10 %:
‹ Output power = 350 W
‹ Power gain = 13.5 dB
‹ Efficiency = 50 %
„ Easy power control
„ Integrated ESD protection
„ High flexibility with respect to pulse formats
„ Excellent ruggedness
„ High efficiency
„ Excellent thermal stability
„ Designed for S-band operation (2.7 GHz to 2.9 GHz)
„ Internally matched for ease of use
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
„ S-band power amplifiers for radar applications in the 2.7 GHz to 2.9 GHz frequency
range