BLS6G3135-20 Datasheet, PDF (1/12 Pages) NXP Semiconductors – LDMOS S-Band radar power transistor

BLS6G3135-20;
BLS6G3135S-20
LDMOS S-Band radar power transistor
Rev. 03 — 3 March 2009
Product data sheet
1. Product profile
1.1 General description
20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz
range.
Table 1. Typical performance
Typical RF performance at T_case = 25 °C; t_p = 300 µs; δ = 10 %; I_Dq = 50 mA; in a class-AB
production test circuit.
Mode of operation f
V_DS
P_L
G_p
η_D
t_r
t_f
(GHz) (V)
(W)
(dB)
(%)
(ns)
(ns)
Pulsed RF
3.1 to 3.5 32
20
15.5
45
20
10
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage
of 32 V, an I_Dq of 50 mA, a t_p of 300 µs and a δ of 10 %:
N Output power = 20 W
N Power gain = 15.5 dB
N Efficiency = 45 %
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (3.1 GHz to 3.5 GHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)