BLS6G3135-120 Datasheet, PDF (1/11 Pages) NXP Semiconductors – LDMOS S-Band radar power transistor

BLS6G3135-120;
BLS6G3135S-120
LDMOS S-Band radar power transistor
Rev. 01 — 14 August 2007
Preliminary data sheet
1. Product profile
1.1 General description
120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz
range.
Table 1. Typical performance
Typical RF performance at T_case = 25 °C; t_p = 300 µs; δ = 10 %; I_Dq = 100 mA; in a class-AB
production test circuit.
Mode of operation
f
(GHz)
V_DS P_L
(V) (W)
G_p η_D
t_r
t_f
(dB) (%) (ns)
(ns)
pulsed RF
3.1 to 3.5 32 120
11 43
20
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage
of 32 V, an I_Dq of 100 mA, a t_p of up to 300 µs with δ of 10 %:
N Output power = 120 W
N Gain = 11 dB
N Efficiency = 43 %
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (3.1 GHz to 3.5 GHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)