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BLP05M7200 Datasheet, PDF (1/9 Pages) NXP Semiconductors – Power LDMOS transistor | |||
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BLP05M7200
Power LDMOS transistor
Rev. 1 â 6 September 2012
Objective data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for various applications such as ISM and RF plasma
lighting at frequencies from 425 MHz to 450 MHz.
Table 1. Typical performance
RF performance at Tcase = 25 ï°C in a common source class-AB production test circuit.
Test signal
f
VDS
PL(AV)
Gp
ï¨D
(MHz)
(V)
(W)
(dB)
(%)
CW
440
28
200
21
78
1.2 Features and benefits
ï® Easy power control
ï® Integrated ESD protection
ï® Excellent ruggedness
ï® High efficiency
ï® Excellent thermal stability
ï® Designed for ISM operation (425 MHz to 450 MHz)
ï® Input integration for simple board design
ï® Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
ï® RF power amplifiers for CW applications in the 425 MHz to 450 MHz frequency range
such as ISM and RF plasma lighting.
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