BLL6H1214-500 Datasheet, PDF (1/20 Pages) NXP Semiconductors – LDMOS L-band radar power transistor

BLL6H1214-500
LDMOS L-band radar power transistor
Rev. 02 — 1 April 2010
Product data sheet
1. Product profile
1.1 General description
500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to
1.4 GHz range.
Table 1. Test information
Typical RF performance at T_case = 25 °C; t_p = 300 μs; δ = 10 %; I_Dq = 150 mA; in a class-AB
production test circuit.
Mode of operation
f
(GHz)
V_DS P_L
(V) (W)
G_p η_D
t_r
t_f
(dB) (%) (ns)
(ns)
pulsed RF
1.2 to 1.4 50 500
17 50
20
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
„ Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage
of 50 V, an I_Dq of 150 mA, a t_p of 300 μs with δ of 10 %:
‹ Output power = 500 W
‹ Power gain = 17 dB
‹ Efficiency = 50 %
„ Easy power control
„ Integrated ESD protection
„ High flexibility with respect to pulse formats
„ Excellent ruggedness
„ High efficiency
„ Excellent thermal stability
„ Designed for broadband operation (1.2 GHz to 1.4 GHz)
„ Internally matched for ease of use
„ Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)