BLL6H0514L-130 Datasheet, PDF (1/13 Pages) NXP Semiconductors – LDMOS driver transistor

BLL6H0514L-130;
BLL6H0514LS-130
LDMOS driver transistor
Rev. 1 — 9 August 2010
Preliminary data sheet
1. Product profile
1.1 General description
130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz
range.
Table 1. Application information
Typical RF performance at T_case = 25 °C; I_Dq = 50 mA; in a class-AB application circuit.
Mode of operation f
t_p
δ
V_DS P_L
G_p
RL_in η_D
(MHz)
(μs) (%) (V) (W) (dB) (dB) (%)
pulsed RF
960 to 1215 128 10 50 130 19 10 54
1200 to 1400 300 10 50 130 17 10 50
P_droop(pulse)
(dB)
0
0
t_r
(ns)
15
15
t_f
(ns)
8
8
1.2 Features and benefits
„ Easy power control
„ Integrated ESD protection
„ High flexibility with respect to pulse formats
„ Excellent ruggedness
„ High efficiency
„ Excellent thermal stability
„ Designed for broadband operation (0.5 GHz to 1.4 GHz)
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
„ Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range