BLL1214-250R Datasheet, PDF (1/12 Pages) NXP Semiconductors – LDMOS L-band radar power transistor

BLL1214-250R
LDMOS L-band radar power transistor
Rev. 01 — 4 February 2010
Product data sheet
1. Product profile
1.1 General description
Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead
flange package (SOT502A) with a ceramic cap. The common source is connected to the
flange.
Table 1. Test information
Typical RF performance at T_h = 25 °C; t_p = 1 ms; δ = 10 %; in a common source class-AB test
circuit.
Mode of operation f
V_DS I_Dq
P_L G_p η_D P_droop(pulse) t_r
t_f
(GHz)
(V) (mA) (W) (dB) (%) (dB)
(ns) (ns)
pulsed RF
1.2 to 1.4 36 150 250 13 47 0.2
15 5
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
„ Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage
of 36 V, an I_Dq of 150 mA, a t_p of 1 ms with δ of 10 %:
‹ Output power = 250 W
‹ Power gain = 13 dB
‹ Efficiency = 47 %
„ High power gain
„ Easy power control
„ Excellent ruggedness
„ Source on mounting base eliminates DC isolators, reducing common mode
inductance.
1.3 Applications
„ L-band radar applications in the 1.2 GHz to 1.4 GHz frequency range