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BLF8G20LS-260A Datasheet, PDF (1/12 Pages) NXP Semiconductors – Power LDMOS transistor | |||
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BLF8G20LS-260A
Power LDMOS transistor
Rev. 1 â 13 September 2012
Objective data sheet
1. Product profile
1.1 General description
260 W LDMOS packaged asymmetrical Doherty power transistor for base station
applications at frequencies from 1805 MHz to 1880 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 ï°C in an asymetric Doherty production test circuit.
Test signal
f
VDS PL(AV)
Gp
ï¨D ACPR
(MHz)
(V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA[2]
1805 to 1880
28 50
15.5 43 ï23[1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 dB at 0.01% probability on CCDF per carrier, carrier
spacing 5 MHz.
[2] IDq = 750 mA (main); VGS(amp)peak = 0.80 V.
1.2 Features and benefits
ï® Excellent ruggedness
ï® High-efficiency
ï® Low Rth providing excellent thermal stability
ï® Designed for broadband operation (1805 MHz to 1880 MHz)
ï® Asymmetrical design to achieve optimum efficiency across the band
ï® Lower output capacitance for improved performance in Doherty applications
ï® Designed for low memory effects providing excellent digital pre-distortion capability
ï® Internally matched for ease of use
ï® Integrated ESD protection
ï® Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
ï® RF power amplifiers for W-CDMA base stations and GSM multi carrier applications in
the 1805 MHz to 1880 MHz frequency range
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