BLF888 Datasheet, PDF (1/17 Pages) NXP Semiconductors – UHF power LDMOS transistor

BLF888
UHF power LDMOS transistor
Rev. 04 — 29 April 2010
Product data sheet
1. Product profile
1.1 General description
A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor is optimized for digital applications and can deliver 110 W
average DVB-T broadband over the full UHF band from 470 MHz to 860 MHz. The
excellent ruggedness of this device makes it ideal for digital transmitter applications.
Table 1. Application information
RF performance at V_DS = 50 V in a common source 860 MHz narrowband test circuit unless
otherwise specified.
Mode of operation f
P_L(PEP) P_L(AV) G_p
_D
IMD3 IMD_shldr
(MHz)
(W) (W) (dB) (%) (dBc) (dBc)
2-Tone, class AB f₁ = 860; f₂ = 860.1 500 250 19 46 32 -
DVB-T (8k OFDM) 858
-
110 19 31 -
31 ^[1]
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
 2-Tone performance at 860 MHz, a drain-source voltage V_DS of 50 V and a quiescent
drain current I_Dq = 1.3 A:
 Peak envelope power load power = 500 W
 Power gain = 19 dB
 Drain efficiency = 46 %
 Third order intermodulation distortion = 32 dBc
 DVB performance at 858 MHz, a drain-source voltage V_DS of 50 V and a quiescent
drain current I_Dq = 1.3 A:
 Average output power = 110 W
 Power gain = 19 dB
 Drain efficiency = 31 %
 Shoulder distance = 31 dBc (4.3 MHz from center frequency)
 Integrated ESD protection
 Advanced flange material for optimum thermal behavior and reliability