BLF881 Datasheet, PDF (1/18 Pages) NXP Semiconductors – UHF power LDMOS transistor

BLF881; BLF881S
UHF power LDMOS transistor
Rev. 02 — 10 February 2010
Product data sheet
1. Product profile
1.1 General description
A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent
ruggedness and broadband performance of this device makes it ideal for digital
transmitter applications.
Table 1. Typical performance
RF performance at V_DS = 50 V in a common-source 860 MHz test circuit.
Mode of operation f
P_L P_L(PEP) P_L(AV) G_p η_D IMD3 IMD_shldr
(MHz)
(W) (W) (W) (dB) (%) (dBc) (dBc)
2-tone, class AB
f₁ = 860; f₂ = 860.1 - 140
-
21 49 −34 -
DVB-T (8k OFDM) 858
--
33 21 34 -
−33^[1]
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
„ 2-Tone performance at 860 MHz, a drain-source voltage V_DS of 50 V and a quiescent
drain current I_Dq = 0.5 A:
‹ Peak envelope power load power = 140 W
‹ Power gain = 21 dB
‹ Drain efficiency = 49 %
‹ Third order intermodulation distortion = −34 dBc
„ DVB performance at 858 MHz, a drain-source voltage V_DS of 50 V and a quiescent
drain current I_Dq = 0.5 A:
‹ Average output power = 33 W
‹ Power gain = 21 dB
‹ Drain efficiency = 34 %
‹ Shoulder distance = −33 dBc (4.3 MHz from center frequency)
„ Integrated ESD protection
„ Excellent ruggedness
„ High power gain