BLF878 Datasheet, PDF (1/18 Pages) NXP Semiconductors – UHF power LDMOS transistor

BLF878
UHF power LDMOS transistor
Rev. 01 — 15 December 2008
Preliminary data sheet
1. Product profile
1.1 General description
A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 300 W broadband over the full UHF band from
470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this
device makes it ideal for digital transmitter applications.
Table 1. Typical performance
RF performance at V_DS = 42 V in a common-source 860 MHz narrowband test circuit.
Mode of operation f
P_L
P_L(PEP) P_L(AV) G_p η_D
IMD3
(MHz)
(W)
(W) (W) (dB) (%) (dBc)
CW, class AB
860
300
-
-
21 60 -
2-tone, class AB f₁ = 860; f₂ = 860.1 -
300 -
PAL BG
860 (ch69)
300 (peak sync.) ^[1] -
-
21 46 −35
21 45 -
DVB-T (8k OFDM) 858
-
-
75
21 32 −32 ^[2]
[1] Black video signal, sync expansion: input sync = 33 %; output sync ≥ 27 %.
[2] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I 2-tone performance at 860 MHz, a drain-source voltage V_DS of 42 V and a quiescent
drain current I_Dq = 1.4 A:
N Peak envelope power load power = 300 W
N Power gain = 21 dB
N Drain efficiency = 46 %
N Third order intermodulation distortion = −35 dBc
I DVB performance at 858 MHz, a drain-source voltage V_DS of 42 V and a quiescent
drain current I_Dq = 1.4 A:
N Average output power = 75 W
N Power gain = 21 dB
N Drain efficiency = 32 %
N Third order intermodulation distortion = −32 dBc (4.3 MHz from center frequency)