BLF871 Datasheet, PDF (1/18 Pages) NXP Semiconductors – UHF power LDMOS transistor

BLF871
UHF power LDMOS transistor
Rev. 02 — 5 March 2009
Preliminary data sheet
1. Product profile
1.1 General description
A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The
excellent ruggedness and broadband performance of this device makes it ideal for digital
transmitter applications.
Table 1. Typical performance
RF performance at V_DS = 40 V in a common-source 860 MHz test circuit.
Mode of operation f
P_L P_L(PEP) P_L(AV) G_p
(MHz)
(W) (W)
(W) (dB)
CW, class AB
860
100 -
-
21
2-tone, class AB
f₁ = 860; f₂ = 860.1 - 100
-
21
DVB-T (8k OFDM) 858
--
24 22
η_D IMD3
(%) (dBc)
60 -
47 −35
33 −34^[1]
PAR
(dB)
-
-
8.3^[2]
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I 2-tone performance at 860 MHz, a drain-source voltage V_DS of 40 V and a quiescent
drain current I_Dq = 0.5 A:
N Peak envelope power load power = 100 W
N Power gain = 21 dB
N Drain efficiency = 47 %
N Third order intermodulation distortion = −35 dBc
I DVB performance at 858 MHz, a drain-source voltage V_DS of 40 V and a quiescent
drain current I_Dq = 0.5 A:
N Average output power = 24 W
N Power gain = 22 dB
N Drain efficiency = 33 %
N Third order intermodulation distortion = −34 dBc (4.3 MHz from center frequency)