BLF7G10L-250 Datasheet, PDF (1/10 Pages) NXP Semiconductors – Power LDMOS transistor

BLF7G10L-250;
BLF7G10LS-250
Power LDMOS transistor
Rev. 1 — 25 February 2011
Objective data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor for base station applications at frequencies from
920 MHz to 960 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
I_Dq
V_DS P_L(AV) G_p
η_D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
920 to 960
2000 30 60
19
30 −32^[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier.
Carrier spacing 5 MHz.
1.2 Features and benefits
„ Excellent ruggedness
„ High efficiency
„ Low R_th providing excellent thermal stability
„ Designed for broadband operation (920 MHz to 960 MHz)
„ Lower output capacitance for improved performance in Doherty applications
„ Designed for low memory effects providing excellent pre-distortability
„ Internally matched for ease of use
„ Integrated ESD protection
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
„ RF power amplifiers for W-CDMA base stations and multi carrier applications in the
920 MHz to 960 MHz frequency range