BLF6G38-50_10 Datasheet, PDF (1/13 Pages) NXP Semiconductors – WiMAX power LDMOS transistor

BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
Rev. 02 — 1 June 2010
Product data sheet
1. Product profile
1.1 General description
50 W LDMOS power transistor for base station applications at frequencies from
3400 MHz to 3800 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 °C in a class-AB production test circuit.
Mode of operation f (MHz)
V_DS (V) P_L(AV) (W) P_L(M)[1] (W) G_p (dB) η_D (%) ACPR_885k (dBc) ACPR_1980k (dBc)
1-carrier N-CDMA^[2] 3400 to 3600 28
9
70
14
23
−49^[3]
−64^[3]
[1] P_L(M) stands for peak output power.
[2] Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the
CCDF. Channel bandwidth is 1.23 MHz.
[3] Measured within 30 kHz bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
„ Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,
synchronization and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 %
probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of
3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V, an I_Dq of 450 mA, a
power gain of 14 dB, a drain efficiency of 23 % and a peak output power of 70 W:
„ Qualified up to a maximum V_DS operation of 32 V
„ Suitable for operation in the 3.4 GHz to 3.8 GHz frequency range
„ Integrated ESD protection
„ Excellent ruggedness
„ High efficiency
„ Excellent thermal stability
„ Designed for broadband operation
„ Internally matched for ease of use
„ Low gold plating thickness on leads
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)