BLF6G38-50 Datasheet, PDF (1/12 Pages) NXP Semiconductors – WiMAX power LDMOS transistor

BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
Rev. 01 — 12 February 2008
Preliminary data sheet
1. Product profile
1.1 General description
50 W LDMOS power transistor for base station applications at frequencies from
3400 MHz to 3800 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 °C in a class-AB production test circuit.
Mode of operation f
V_DS P_L(AV) P_L(M)[1] G_p η_D ACPR_885k ACPR_1980k
(MHz)
(V) (W) (W)
(dB) (%) (dBc)
(dBc)
1-carrier N-CDMA^[2] 3400 to 3600 28 9
70
14 23 −49^[3]
−64^[3]
[1] P_L(M) stands for peak output power.
[2] Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz.
[3] Measured within 30 kHz bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,
sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability
on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz
and 3600 MHz, a supply voltage of 28 V, an I_Dq of 450 mA, a power gain of 14 dB, a
drain efficiency of 23 % and a peak output power of 70 W:
I Qualified up to a maximum V_DS operation of 32 V
I Suitable for operation in the 3.4 GHz to 3.8 GHz frequency range
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation
I Internally matched for ease of use
I Low gold plating thickness on leads