BLF6G38-100 Datasheet, PDF (1/12 Pages) NXP Semiconductors – WiMAX power LDMOS transistor

BLF6G38-100; BLF6G38LS-100
WiMAX power LDMOS transistor
Rev. 01 — 11 November 2008
Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor for base station applications at frequencies from
3400 MHz to 3600 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 °C in a class-AB production test circuit.
Mode of operation f
V_DS P_L(AV) P_L(p) G_p η_D ACPR_885k
(MHz)
(V) (W) (W) (dB) (%) (dBc)
1-carrier N-CDMA^[1] 3400 to 3600 28 18.5 130 13 21.5 −47.5^[2]
ACPR_1980k
(dBc)
−65^[2]
[1] Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz.
[2] Measured within 30 kHz bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,
sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability
on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz
and 3600 MHz, a supply voltage of 28 V and an I_Dq of 1050 mA:
I Qualified up to a maximum V_DS operation of 32 V
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation
I Internally matched for ease of use
I Low gold plating thickness on leads
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)