BLF6G27S-45_08 Datasheet, PDF (1/16 Pages) NXP Semiconductors – WiMAX power LDMOS transistor

BLF6G27-45; BLF6G27S-45
WiMAX power LDMOS transistor
Rev. 03 — 15 December 2008
Product data sheet
1. Product profile
1.1 General description
45 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
Table 1. Typical performance
RF performance at T_case = 25 °C in a class-AB production test circuit.
Mode of operation f
V_DS P_L(AV) G_p η_D ACPR_885k
(MHz)
(V) (W) (dB) (%) (dBc)
1-carrier N-CDMA^[1] 2500 to 2700 28 7
18 24 −49^[2]
ACPR_1980k
(dBc)
−64^[2]
[1] Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz.
[2] Measured within 30 kHz bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 1-carrier N-CDMA performance (single carrier N-CDMA with pilot, paging, sync
and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on
CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and
an I_Dq of 350 mA:
I Qualified up to a maximum V_DS operation of 32 V
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation
I Internally matched for ease of use
I Low gold plating thickness on leads
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)