BLF6G27-75 Datasheet, PDF (1/14 Pages) NXP Semiconductors – WiMAX power LDMOS transistor

BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
Rev. 01 — 22 October 2009
Product data sheet
1. Product profile
1.1 General description
75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz
to 2700 MHz.
Table 1. Typical performance
RF performance at T_case = 25 °C in a class-AB production test circuit.
Mode of operation f
V_DS P_L(AV) P_L(M) G_p η_D
(MHz)
(V) (W) (W) (dB) (%)
1-carrier N-CDMA^[1] 2500 to 2700 28 9
75 17 23
ACPR_885k
(dBc)
−50^[2]
ACPR_1980k
(dBc)
−60^[2]
[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
[2] Measured within 30 kHz bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 1-carrier N-CDMA performance (Single carrier IS-95 with pilot, paging, sync
and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the
CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz and
2700 MHz, a supply voltage of 28 V and an I_Dq of 600 mA:
N Average output power = 9 W
N Power gain = 17 dB
N Drain efficiency = 23 %
N ACPR₈₈₅ = −50.0 dBc in 30 kHz bandwidth
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (2500 MHz to 2700 MHz)
I Internally matched for ease of use