BLF6G22-180RN Datasheet, PDF (1/11 Pages) NXP Semiconductors – Power LDMOS transistor

BLF6G22-180RN;
BLF6G22LS-180RN
Power LDMOS transistor
Rev. 01 — 20 November 2008
Product data sheet
1. Product profile
1.1 General description
180 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 °C in a class-AB production test circuit.
Mode of operation
f
V_DS P_L(AV) G_p
η_D
IMD3
(MHz)
(V) (W) (dB) (%) (dBc)
2-carrier W-CDMA
2110 to 2170 30 40
16.0 25
−38^[1]
ACPR
(dBc)
−42^[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,
a supply voltage of 30 V and an I_Dq of 1400 mA:
N Average output power = 40 W
N Power gain = 16.0 dB
N Efficiency = 25 %
N IMD3 = −38 dBc
N ACPR = −42 dBc
I Easy power control
I Integrated ESD protection
I Enhanced ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (2000 MHz to 2200 MHz)
I Internally matched for ease of use