BLF6G22-180PN Datasheet, PDF (1/11 Pages) NXP Semiconductors – Power LDMOS transistor

BLF6G22-180PN
Power LDMOS transistor
Rev. 02 — 23 April 2008
Product data sheet
1. Product profile
1.1 General description
180 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1. Typical performance
RF performance at T_case = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
V_DS P_L(AV)
G_p
η_D
(MHz)
(V) (W)
(dB) (%)
2-carrier W-CDMA
2110 to 2170
32 50
17.5 27.5
ACPR
(dBc)
−35^[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a
supply voltage of 32 V and an I_Dq of 1600 mA:
N Average output power = 50 W
N Power gain = 17.5 dB (typ)
N Efficiency = 27.5 %
N ACPR = −35 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (2000 MHz to 2200 MHz)
I Internally matched for ease of use
I Qualified up to a supply voltage of 32 V
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)